Samsung 8GB DDR3, 1333MHz, 240-pin DIMM, CL9, 1.35V

Samsung 8GB DDR3, 1333MHz, 240-pin DIMM, CL9, 1.35V

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MPN M393B1K70DH0-YH9-RFB

EAN/UPC 5711783334460

Atsargų lygis

Boost your PC’s performance to new levels.
You need the right expert for the right PC memory solution.
Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.
Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.

Improved bandwidth for high-end applications.
With PC applications becoming more critical and complex, personal computing has set its toughest demands ...

Perskaitykite pilną aprašymą

    Specifikacijos M393B1K70DH0-YH9-RFB

    Features

    CAS latency

    9

    Component for

    PC/Server

    ECC

    Yes

    Halogen-free

    Yes

    Internal memory

    8 GB

    Internal memory type

    DDR3

    Memory clock speed

    1333 MHz

    Memory form factor

    240-pin DIMM

    Memory layout (modules x size)

    1 x 8 GB

    Memory ranking

    2

    Memory voltage

    1.35

    Module configuration

    1024M x 72

    Refresh row cycle time

    9 Nanosecond

    RoHS compliance

    Yes

    Row cycle time

    9 Nanosecond

    Operational conditions

    Operating temperature (T-T)

    0 - 85 °C

    Package dimensions

    Gross Weight (Package, kg)

    0,5 kg

    Product dimensions

    Net Weight (Product, kg)

    0,4 kg

    Product Depth

    0,4 cm

    Product Height

    3 cm

    Product Width

    13,33 cm

    Sustainability

    Doesn't contain

    Halogen

    Sustainability certificates

    RoHS

    Technical details

    Doesn't contain

    Halogen

    Sustainability certificates

    RoHS

    Vendor information

    Brand Name

    Warranty

    1 Metai

    Aprašymas

    8GB DDR3, 1333MHz, 240-pin DIMM, CL9, 1.35V

    Boost your PC’s performance to new levels.
    You need the right expert for the right PC memory solution.
    Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.
    Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.

    Improved bandwidth for high-end applications.
    With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.

    Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.

    Complete multi-tasking with less energy.
    Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.

    Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.

    Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.

    Double your capacity with the world’s 1st 8Gb chips.
    The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.

    Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.

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