MPN KVR13N9S8/4
EAN/UPC 740617207620
OEM 1836779
Atsargų lygis
This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA compo- nents. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifica- tions are as follows:
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
...
Unregistered (unbuffered)
9
PC/Server
No
4 GB
DDR3
Gold
64 bitai
1333 MHz
240-pin DIMM
1 x 4 GB
1
1.5 V
512M x 64
Green
260 Nanosecond
36 Nanosecond
49,125 Nanosecond
Yes
0 - 85 °C
-55 - 100 °C
4,6 cm
0,022 kg
0,9 cm
14,5 cm
0,02 kg
3 cm
13,33 cm
2 Metai
This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA compo- nents. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifica- tions are as follows:
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)
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