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- Transcend Transcend DDR4, 2400 MHz, 8GB, SO-DIMM, 1Rx8, (1Gx8)x8, 1.2V – TS1GSH64V4B
Transcend Transcend DDR4, 2400 MHz, 8GB, SO-DIMM, 1Rx8, (1Gx8)x8, 1.2V
Transcend Transcend DDR4, 2400 MHz, 8GB, SO-DIMM, 1Rx8, (1Gx8)x8, 1.2V
MPN TS1GSH64V4B
EAN / UPC 760557835073
Nivel de existencias
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performa...
Leer descripción completaJEDEC standard 1.2V ± 0.06V power supply
High energy efficiency
8 bit pre-fetch
Burst Length: 4, 8
16 Banks (4 Bank Groups)
Support DBI mode
Support Command/Address parity detection
Support Data Cyclic Redundancy Check (CRC) for improved data reliability
On-die termination with ODT pin
Serial presence detect with EEPROM
Especificaciones de TS1GSH64V4B
Features
Clasificación de memoria
1
Componente para
Notebook
Configuración del módulo
1024M x 8
Diseño de memoria (módulos x tamaño)
1 x 8 GB
ECC
No
Factor forma memoria
260-pin SO-DIMM
Latencia CAS
17
Memoria interna
8 GB
Tipo de memoria búfer
Unregistered (unbuffered)
Tipo memoria interna
DDR4
Velocidad de reloj de memoria
2400 MHz
Voltaje de memoria
1.2 V
Logistics data
Código del Sistema Armonizado (SA)
84733020
Operational conditions
Temperatura de funcionamiento (T-T)
0 - 85 °C
Other features
Código del Sistema Armonizado (SA)
84733020
Package dimensions (verified)
Depth Verified
10 cm
Gross Weight Verified
0,1 kg
Height Verified
0,9 cm
Width Verified
12,7 cm
Product dimensions
Net Weight (Product, kg)
0,09000000000000001 kg
Vendor information
Brand Name
Warranty
1 Año/s
Descripción
Transcend DDR4, 2400 MHz, 8GB, SO-DIMM, 1Rx8, (1Gx8)x8, 1.2V
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
Documentos
*Los datos de producto anteriores son proporcionados por Icecat. EET no se hace responsable de los errores en relación con esto.