Samsung 8GB DDR3L, 1600 MHz, CL11, 1.35V

Samsung 8GB DDR3L, 1600 MHz, CL11, 1.35V

Este produto é usado ou recondicionado. Todos os acessórios podem NÃO estar incluídos.

MPN M393B1G70BH0-YK0-RFB

EAN/UPC 5706998905949

Nível de stock

DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several ...

Ler descrição completa

    Especificações para M393B1G70BH0-YK0-RFB

    Features

    Buffered memory type

    Registered (buffered)

    CAS latency

    11

    Component for

    PC/Server

    Internal memory

    8 GB

    Internal memory type

    DDR3L

    Memory clock speed

    1600 MHz

    Memory form factor

    240-pin DIMM

    Memory layout (modules x size)

    1 x 8 GB

    Memory ranking

    1

    Memory voltage

    1.35

    Module configuration

    1024M x 72

    Operational conditions

    Operating temperature (T-T)

    0 - 85 °C

    Package dimensions

    Gross Weight (Package, kg)

    0,5 kg

    Product dimensions

    Net Weight (Product, kg)

    0,4 kg

    Product Height

    3 cm

    Vendor information

    Brand Name

    Warranty

    1 Ano(s)

    Descrição

    8GB DDR3L, 1600 MHz, CL11, 1.35V

    DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.


    Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.

    *Os dados do produto acima são fornecidos pela Icecat. A EET não pode ser responsabilizada por erros relacionados.

    EET PortugalRua do Progresso 11-123800-639 AveiroNº de Contribuinte 502807474
    Portugal / Português